Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures
Identifieur interne : 001830 ( France/Analysis ); précédent : 001829; suivant : 001831Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures
Auteurs : RBID : Pascal:98-0378138Descripteurs français
- Pascal (Inist)
- 7866F, 7855C, 7320D, 7820L, Etude expérimentale, Hétérojonction, Gallium arséniure, Gallium phosphure, Indium phosphure, Dépendance pression, Photoluminescence, Structure électronique, Champ magnétique, Spectre émission, Excitation, Bande interdite, Semiconducteur III-V, Gallium composé, Indium composé, Hétérojonction semiconducteur, Gaz électron 2 dimensions, Effet magnétooptique, Puits quantique semiconducteur.
English descriptors
- KwdEn :
- Electronic structure, Emission spectra, Energy gap, Excitation, Experimental study, Gallium arsenides, Gallium compounds, Gallium phosphides, Heterojunctions, III-V semiconductors, Indium compounds, Indium phosphides, Magnetic fields, Magneto-optical effects, Photoluminescence, Pressure dependence, Semiconductor heterojunctions, Semiconductor quantum wells, Two-dimensional electron gas.
Abstract
We report on a detailed optical study of emission from a series of GaInP (ordered)/GaAs heterostructures. Some of these structures contain one or two thin (∼2 nm) layers of GaP between the GaInP and GaAs layers. A so-called deep emission band at 1.46 eV is observed in all our samples. However, at high excitation power, an emission above the band gap of GaAs (previously identified as quantum well emission) emerges only in structures where GaP layers are inserted on both sides in between the GaAs well and its GaInP barriers. From the pressure dependence we have identified the deep emission peak as due to donor-acceptor pair transitions at the GaAs/GaInP interface. The insertion of GaP layers between the GaInP (ordered) and GaAs layers helps to suppress the defects which contribute to this deep emission. By applying pressure to the sample which exhibits quantum well emission we have determined its band alignments. We show that the GaP layers form two effective barriers for confining electrons within the GaAs well. However, the magnetic field dependence of the quantum well emission reveals that the electrons form only a quasi-two-dimensional gas inside the GaAs well. © 1998 American Institute of Physics.
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Kwok</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of California, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Physics, University of California, Berkeley</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Yu, P Y" uniqKey="Yu P">P. Y. Yu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Physics, University of California, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Department of Physics, University of California, Berkeley</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley</wicri:cityArea></affiliation></author><author><name sortKey="Zeman, J" uniqKey="Zeman J">J. Zeman</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Jullian, S" uniqKey="Jullian S">S. Jullian</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Martinez, G" uniqKey="Martinez G">G. Martinez</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9</wicri:regionArea><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Uchida, K" uniqKey="Uchida K">K. Uchida</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Department of Communications and Systems, University of Electro-communications, Chofu, Tokyo, Japan</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Department of Communications and Systems, University of Electro-communications, Chofu, Tokyo</wicri:regionArea><placeName><settlement type="city">Tokyo</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">98-0378138</idno><date when="1998-09-01">1998-09-01</date><idno type="stanalyst">PASCAL 98-0378138 AIP</idno><idno type="RBID">Pascal:98-0378138</idno><idno type="wicri:Area/Main/Corpus">016894</idno><idno type="wicri:Area/Main/Repository">015C00</idno><idno type="wicri:Area/France/Extraction">001830</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Electronic structure</term><term>Emission spectra</term><term>Energy gap</term><term>Excitation</term><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>Gallium phosphides</term><term>Heterojunctions</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium phosphides</term><term>Magnetic fields</term><term>Magneto-optical effects</term><term>Photoluminescence</term><term>Pressure dependence</term><term>Semiconductor heterojunctions</term><term>Semiconductor quantum wells</term><term>Two-dimensional electron gas</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7855C</term><term>7320D</term><term>7820L</term><term>Etude expérimentale</term><term>Hétérojonction</term><term>Gallium arséniure</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>Dépendance pression</term><term>Photoluminescence</term><term>Structure électronique</term><term>Champ magnétique</term><term>Spectre émission</term><term>Excitation</term><term>Bande interdite</term><term>Semiconducteur III-V</term><term>Gallium composé</term><term>Indium composé</term><term>Hétérojonction semiconducteur</term><term>Gaz électron 2 dimensions</term><term>Effet magnétooptique</term><term>Puits quantique semiconducteur</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on a detailed optical study of emission from a series of GaInP (ordered)/GaAs heterostructures. Some of these structures contain one or two thin (∼2 nm) layers of GaP between the GaInP and GaAs layers. A so-called deep emission band at 1.46 eV is observed in all our samples. However, at high excitation power, an emission above the band gap of GaAs (previously identified as quantum well emission) emerges only in structures where GaP layers are inserted on both sides in between the GaAs well and its GaInP barriers. From the pressure dependence we have identified the deep emission peak as due to donor-acceptor pair transitions at the GaAs/GaInP interface. The insertion of GaP layers between the GaInP (ordered) and GaAs layers helps to suppress the defects which contribute to this deep emission. By applying pressure to the sample which exhibits quantum well emission we have determined its band alignments. We show that the GaP layers form two effective barriers for confining electrons within the GaAs well. However, the magnetic field dependence of the quantum well emission reveals that the electrons form only a quasi-two-dimensional gas inside the GaAs well. © 1998 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optical studies of GaInP(ordered)/GaAs and GaInP(ordered)/GaP/GaAs heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>KWOK (S. H.)</s1></fA11><fA11 i1="02" i2="1"><s1>YU (P. Y.)</s1></fA11><fA11 i1="03" i2="1"><s1>ZEMAN (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>JULLIAN (S.)</s1></fA11><fA11 i1="05" i2="1"><s1>MARTINEZ (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>UCHIDA (K.)</s1></fA11><fA14 i1="01"><s1>Department of Physics, University of California, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>Grenoble High Magnetic Field Laboratory CNRS/MPI-FKF, BP 166, 25, Avenue des Martyrs, 38042 Grenoble Cedex 9, France</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>Department of Communications and Systems, University of Electro-communications, Chofu, Tokyo, Japan</s1><sZ>6 aut.</sZ></fA14><fA20><s1>2846-2854</s1></fA20><fA21><s1>1998-09-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1998 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>98-0378138</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on a detailed optical study of emission from a series of GaInP (ordered)/GaAs heterostructures. Some of these structures contain one or two thin (∼2 nm) layers of GaP between the GaInP and GaAs layers. A so-called deep emission band at 1.46 eV is observed in all our samples. However, at high excitation power, an emission above the band gap of GaAs (previously identified as quantum well emission) emerges only in structures where GaP layers are inserted on both sides in between the GaAs well and its GaInP barriers. From the pressure dependence we have identified the deep emission peak as due to donor-acceptor pair transitions at the GaAs/GaInP interface. The insertion of GaP layers between the GaInP (ordered) and GaAs layers helps to suppress the defects which contribute to this deep emission. By applying pressure to the sample which exhibits quantum well emission we have determined its band alignments. We show that the GaP layers form two effective barriers for confining electrons within the GaAs well. However, the magnetic field dependence of the quantum well emission reveals that the electrons form only a quasi-two-dimensional gas inside the GaAs well. © 1998 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C20D</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H20L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7320D</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7820L</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Hétérojonction</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Heterojunctions</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Dépendance pression</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Pressure dependence</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Structure électronique</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electronic structure</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Champ magnétique</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Magnetic fields</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Spectre émission</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Emission spectra</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Excitation</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Excitation</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Hétérojonction semiconducteur</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Semiconductor heterojunctions</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Gaz électron 2 dimensions</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Two-dimensional electron gas</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Effet magnétooptique</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Magneto-optical effects</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0></fC03><fN21><s1>251</s1></fN21><fN47 i1="01" i2="1"><s0>9817M000703</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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